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Journal Articles

Suppressed diffusion of implanted boron in 4H-SiC

M.Laube*; G.Pensl*; Ito, Hisayoshi

Applied Physics Letters, 74(16), p.2292 - 2294, 1999/04

 Times Cited Count:53 Percentile:86.81(Physics, Applied)

no abstracts in English

Journal Articles

Effects of C or Si co-implantation on the electrical activation of B atoms implanted in 4H-SiC

Ito, Hisayoshi; T.Troffer*; C.Peppermuller*; G.Pensl*

Applied Physics Letters, 73(10), p.1427 - 1429, 1998/09

 Times Cited Count:31 Percentile:76.91(Physics, Applied)

no abstracts in English

Journal Articles

Control of electrical properties of SiC using ion implantation technique

Ito, Hisayoshi; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; T.Troffer*; G.Pensl*

Ionics, 24, p.45 - 52, 1998/07

no abstracts in English

Journal Articles

Characterization of defects in silicon carbide irradiated with high energy particles

Ito, Hisayoshi; D.Cha*; Isoya, Junichi*; Kawasuso, Atsuo; Oshima, Takeshi; Okada, Sohei; Nashiyama, Isamu

Proceedings of 3rd International Workshop on Radiation Effects on Semiconductor Devices for Space Application, p.28 - 33, 1998/00

no abstracts in English

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